Project information
Physical properties of new materials and layered structures
- Project Identification
- MSM 143100002
- Project Period
- 1/1999 - 12/2004
- Investor / Pogramme / Project type
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Ministry of Education, Youth and Sports of the CR
- Research Intents
- MU Faculty or unit
- Faculty of Science
- Keywords
- semiconductors;low-dimensional structures;quantum dots;organic layers;ferroelectrics;high-temperature superconductors;ellipsometry;reflectometry;x-ray diffraction;x-ray reflection
Results
Publications
Total number of publications: 213
1998
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Silicon-germanium alloys (Si x Ge 1-x) revisited
Handbook of optical Constants of solids III, edition: Vyd. 1, year: 1998, number of pages: 16 s.
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Structural characterization of self-assembled Ge dot multilayers by x-ray diffraction and reflectivity methods
Physica E 2, year: 1998, volume: 1998, edition: -
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X-ray reflection by multilayer surface gratings
Physica B condensed matter, year: 1998, volume: 248, edition: 9999
1997
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Diffuse X-ray reflection from multilayers with stepped interfaces
Physical Review B, year: 1997, volume: (55)1997, edition: 15
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Diffuse x-ray scattering from epitaxial thin layers
Surface Investigation, year: 1997, volume: 1997, edition: 12
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Excitonic effects in free-standing ultrathin GaAs films
Phys. Rev. B, year: 1997, volume: 1997, edition: 55
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High resolution X-ray diffraction and reflectivity studies f vertical and lateral ordering in multiple self-organized InGaAs quantum dots
Jpn.J.Appl.Phys., year: 1997, volume: 36(1997), edition: 6B
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High-resolution X-ray diffraction from multilayered self-assembled Ge dots
Physical Review B, year: 1997, volume: (55)1997, edition: 23
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Interface study of W/Si multilayers with increasing number of periods
II Nuovo Cimento, year: 1997, volume: 1997, edition: 19 D
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Lateral and vertical ordering in multilayered self-organized InGaAs quantum dots studied by high resolution X-ray diffraction
Appl.Phys. Lett., year: 1997, volume: (70)1997, edition: 8