Project information
Physical properties of new materials and layered structures
- Project Identification
- MSM 143100002
- Project Period
- 1/1999 - 12/2004
- Investor / Pogramme / Project type
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Ministry of Education, Youth and Sports of the CR
- Research Intents
- MU Faculty or unit
- Faculty of Science
- Keywords
- semiconductors;low-dimensional structures;quantum dots;organic layers;ferroelectrics;high-temperature superconductors;ellipsometry;reflectometry;x-ray diffraction;x-ray reflection
Results
Publications
Total number of publications: 213
2004
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Annealing studies of high Ge composition Si/SiGe multilayers
Zeitschrift fur Kristalographie, year: 2004, volume: 219, edition: 4
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Anomalous oxygen-isotope effect on the in-plane far-infrared conductivity of detwinned (YBa2Cu3O6.9)-O-16,18
Physical Review B, year: 2004, volume: 69, edition: 5
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Atomic Force Microscopy Analysis of Statistical Roughness of GaAs Surfaces Originated by Thermal Oxidation
Microchimica Acta, year: 2004, volume: 147, edition: 3
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Diffraction effects in infrared ellipsometry of conducting samples
Thin Solid Films, year: 2004, volume: 455-456, edition: 1
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Electronic Structure and Optical Properties of InAs/GaAs Quantum Dots
WDS'04 Proceedings of contributed papers, year: 2004
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Experimental study of Ni3Al slip traces by atomic force microscopy: an evidence of mobile dislocation exhaustion
Materials Science and Engineering A, year: 2004, volume: 387-389, edition: 1
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Far-infrared ellipsometry using a synchrotron light source - the dielectric response of the cuprate high Tc superconductors
Thin Solid Films, year: 2004, volume: 455-456, edition: 1
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High-resolution diffuse x-ray scattering from threading dislocations in heteroepitaxial layers
Applied Physics Letters, year: 2004, volume: 85, edition: 7
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High-Resolution X-Ray Scattering From Thin Films to Lateral Nanostructures
Year: 2004, number of pages: 408 s.
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Infrared Absorption Spectroscopy of Oxygen Precipitates in Czochralski Silicon
WDS'04 Proceedings of Contributed Papers, year: 2004