Project information
Physical properties of new materials and layered structures
- Project Identification
- MSM 143100002
- Project Period
- 1/1999 - 12/2004
- Investor / Pogramme / Project type
-
Ministry of Education, Youth and Sports of the CR
- Research Intents
- MU Faculty or unit
- Faculty of Science
- Keywords
- semiconductors;low-dimensional structures;quantum dots;organic layers;ferroelectrics;high-temperature superconductors;ellipsometry;reflectometry;x-ray diffraction;x-ray reflection
Results
Publications
Total number of publications: 213
2004
-
PtSi formation on silicon substrate
22nd European Crystallographic Meeting, Abstracts, year: 2004
-
Shape and composition change of Ge dots due to Si capping
Applied Surface Science, year: 2004, volume: 224, edition: 2
-
Structural properties of self-organized semiconductor nanostructures
Review of Moder Physics, year: 2004, volume: 76, edition: 4
-
Synchrotron-radiation X-ray tomography: a method for 3D imaging of cement microstructure and its evolution during hydration
Proceedings of XIV. International Symposium SANACE 2004, year: 2004
-
Temperature dependence of ellipsometric spectra of poly(methyl-phenylsilane)
Thin Solid Films, year: 2004, volume: 455/2004, edition: may
-
X-ray diffraction on laterally modulated (InAs)n/(AlAs)m short-period superlattices
Journal of Applied Physics, year: 2004, volume: 96, edition: 9
-
X-ray Diffuse Scattering from Defects in Nitrogen-doped Czochralski Grown Silicon Wafers
Proceedings of The Ninth Scientific and Business Conference SILICON 2004, year: 2004
-
X-ray reflection study of early stages of Pt silicide formation
7th Bienal Conference on High Resolution X-ray Diffraction and Imaging, Book of abstracts, year: 2004
2003
-
Approximate tight-binding sum rule for the superconductivity-related change of c-axis kinetic energy in multilayer cuprate superconductors
Physical Review B, year: 2003, volume: 67, edition: January
-
Composition determination in quantum dots with in-plane scattering compared with STEM and ADX analysis
J. Phys. D: Appl. Phys., year: 2003, volume: 36, edition: 10